LOCALIZED VIBRATIONS DUE TO BORON AND LITHIUM IN THE SILICON LATTICE,

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Abstract:

The infrared absorption spectrum of Silicon crystals containing two electrically compensated impurities, Boron and Lithium, in concentrations above 10 to the 19th power per cu cm reveals six absorption peaks at 648, 657, 585, 564, 534 and 522cm 1 attributed to localized vibrations due to those impurities. Author

Author(s):
Balkanski, M. ; Nazarewicz, W.
Author Organization(s):
ECOLE NORMALE SUPERIEURE PARIS (FRANCE)
Supplementary Note:
See also AD-611 145.
Annotation:
Localized vibrations due to Boron and Lithium in the silicon lattice.
Pagination:
0015

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TN-4, AFOSR-5432
Contract/Grant Number(s):
AF61 052 572
Monitor Series:
5432
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*SILICON, CRYSTALS), (*CRYSTAL LATTICES, SILICON), (*ABSORPTION SPECTRA, SILICON), INFRARED SPECTROSCOPY, VIBRATION, FRANCE, IMPURITIES, BORON, LITHIUM, OPTICAL PROPERTIES, CRYSTAL DEFECTS, POLARIZATION
Report Date:
1963 Sep 15