ELECTRONIC PARTS-ACCELERATED LIFE TESTS.

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Abstract:

The purpose of this effort was to investigate and develop test measurement techniques to controllably accelerate aging of silicon epitaxial planar transistors and to empiri cally determine a linear equation relating stress factors, environmental tests, and operating life tests, thereby making it possible to predict the reliability of these transistors. A total of 4265 PNP type 2N1132 transistors were used as the vehicles for this program. Summaries of the results of step-stress tests, operating life tests, environmental tests, and matrix test are presented. Analysis of these test results with estimated acceleration factors, failure rates, and parameter distribution and stability plots are also presented. Important conclusions resulting from the tests completed along with recommendations of areas in which additional studies might be pursued to obtain a better method of transistor reliability prediction and measure are contained in the report. Author

Author(s):
Greer, P. H.
Author Organization(s):
MOTOROLA INC PHOENIX ARIZ
Descriptive Note:
Final rept. for 31 Jan 63-30 Jan 64,
Annotation:
Electronic parts-accelerated life tests.
Pagination:
0171

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RADC-TDR64 142
Contract/Grant Number(s):
AF30 602 2970
Task Number(s):
551902
Project Number(s):
5519
Monitor Series:
TDR64 142
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*RELIABILITY(ELECTRONICS), *TEST EQUIPMENT, RELIABILITY(ELECTRONICS), TRANSISTORS, ELECTRONIC EQUIPMENT, TRANSISTORS, SILICON, ENVIRONMENTAL TESTS, LIFE EXPECTANCY(SERVICE LIFE), ACCELERATION, EPITAXIAL GROWTH, MATHEMATICAL ANALYSIS, TEST METHODS, STABILITY
Keyword(s):
SILICON EPITAXIAL PLANAR TRANSISTORS
Report Date:
1964 Oct 01