APPLICATION OF SEMI-CONDUCTOR DEVICES TO HIGH POWER DUPLEXERS.

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Abstract:

The purpose is to design and develop a breadboard model of a high-power solid state duplexer having the following design goals frequency range, 5.4 to 5.9 gc low-level VSWR 1.4 max low-level insertion loss 0.5 db max arc loss 0.4 db max recovery time 10 mu sec max peak power 1 megawatt average power 1000 watts life 10,000 hours min and high-power isolation 30 db min. A detailed description of a series of experiments to determine the junction temperature behavior of a PIN diode while subjected in the forward biased state to pulsed RF energies is presented.

Author(s):
Basken, Paul
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MASS
Descriptive Note:
Quarterly technical rept. no. 1, 1 Apr-30 Jun 64,
Annotation:
Application of semi-conductor devices to high power duplexers.
Pagination:
0027

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RADC-TDR64 396
Contract/Grant Number(s):
AF30 602 3278
Task Number(s):
557304
Project Number(s):
5573
Monitor Series:
TDR64 396
 Subject Terms
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*SWITCHING CIRCUITS, MICROWAVE EQUIPMENT, SEMICONDUCTOR DIODES, SOLID STATE PHYSICS
Keyword(s):
PIN DIODES
Report Date:
1964 Oct 01