HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.

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Abstract:

The basic device and encapsulation designs for the 500-volt500-ampere switch are given, and the device fabrication process outlined. The problems with silicon material for such a large area device are treated in detail since their solution or circumvention constituted a major portion of the program. Equivalent emphasis is given to device characterization since the 500-ampere current level - with all of its implications - is far in excess of commercially available silicon controlled rectifiers. Data are reported on fifty final device samples delivered to the Navy Department. These devices are the largest silicon controlled rectifiers ever fabricated and represent a tremendous advance in the state-of-art of semiconductor power switches. Author

Author(s):
No Author(s) Identified
Author Organization(s):
WESTINGHOUSE ELECTRIC CORP WASHINGTON D C
Descriptive Note:
Final development rept. for 29 Jun 62-31 Oct 64.
Annotation:
High current and high voltage silicon controlled rectifiers.
Pagination:
0153

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
NObsr87647
Task Number(s):
9348
Project Number(s):
SR0080301
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing
Communities of Interest:
Advanced Electronics
Descriptor(s):
*CRYSTAL RECTIFIERS, SILICON, CRYSTAL GROWTH, ENCAPSULATION, MANUFACTURING, ELECTRONIC SWITCHES, DIFFUSION, IMPURITIES, GALLIUM, ALUMINUM, SILICON ALLOYS, GOLD ALLOYS, PERFORMANCE(ENGINEERING)
Report Date:
1964 Oct 31