SEMICONDUCTOR DEVICE CONCEPTS.

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Abstract:

Studies of the defect chemistry of the II-VI compounds were continued see AD-433 975 and a comparison was made of the electrical behavior of CdTe, CdS, and ZnSe following either thermal firings or 1.5 Mev electron bombardment. The diffusion of Cu into undoped ZnS as well as Cl-doped and Al-doped ZnSe was investigated by radiotracer techniques. The results were used to correlate the electrical and optical activity of some defect centers in II-VI compounds. The halogen transport growth of GaAsxP1-x crystals continued. Laser quality material is being produced, but the ingots, while relatively homogeneous, are polycrystalline. Several ingots of GaAs and GaAsxP1-x were made using a lower furnace temperature. These ingots have large single-crystal regions and are more homogeneously doped than previous ones. Exciton and related luminescence phenomena that occur near the band edge of a semiconductor are discussed and compared with the absorption spectrum. Author

Author(s):
Woodbury, H. H. ; Aven, M. ; Heumann, F. K. ; Hall, R. N.
Author Organization(s):
GENERAL ELECTRIC CO SCHENECTADY N Y
Descriptive Note:
Scientific rept. no. 7,
Annotation:
Semiconductor device concepts: Defect chemistry; diffusion of impurities; halogen transport crystal growth; luminescence.
Pagination:
0067

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFCRL-64 467
Contract/Grant Number(s):
AF19 628 329
Task Number(s):
460805
Project Number(s):
4608
Monitor Series:
64 467
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTOR DEVICES, PREPARATION), CADMIUM COMPOUNDS, TELLURIDES, SULFIDES, ZINC COMPOUNDS, SELENIDES, ELECTRICAL PROPERTIES, HEAT TREATMENT, ELECTRON IRRADIATION, IMPURITIES, COPPER, CHLORINE, ALUMINUM, TRACER STUDIES, CRYSTAL DEFECTS, OPTICAL PROPERTIES, SINGLE CRYSTALS, GALLIUM ALLOYS, ARSENIC ALLOYS, CRYSTAL GROWTH, LUMINESCENCE, ABSORPTION SPECTRA
Keyword(s):
CADMIUM TELLURIDE, ZINC SELENIDE
Report Date:
1964 May 05