PHOTOCONDUCTIVITY OF GALLIUM ANTIMONIDE.

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Abstract:

The photoconductivity of GaSb was studied to obtain information about impurity or defect levels and to elucidate the recombination processes of excess carriers. The spectral distribution, the steady state magnitude of the response and the transient behavior of the photoconductive signal were studied. Measurements were made in the temperature range of 5 K to 370 K. Author

Author(s):
Habegger, M. A.
Author Organization(s):
PURDUE UNIV LAFAYETTE IND
Descriptive Note:
Technical rept. (thesis),
Annotation:
Photoconductivity of gallium antimonide.
Pagination:
0156

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
Nonr1100 04
Project Number(s):
NR015 221
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*ANTIMONY ALLOYS, PHOTOCONDUCTIVITY), (*GALLIUM ALLOYS, PHOTOCONDUCTIVITY), PHOTOELECTRIC MATERIALS, SINGLE CRYSTALS, CRYSTAL DEFECTS, EXCITATION, ATOMIC ENERGY LEVELS, PHONONS, ELECTRONS
Keyword(s):
GALLIUM ANTIMONIDES
Report Date:
1964 Jun 01