MEASUREMENTS OF SILICON PHOTODIODE CHARACTERISTICS UNDER BACKGROUND RADIATION CONDITIONS.

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Abstract:

The performance characteristics of the silicon photodiode under different background conditions are evaluated experimentally and, to a lesser degree, analytically. The performance characteristics investigated are responsivity, frequency response time constant, noise-equivalent power, spectral response, and dynamic impedance. In the tests, these characteristics were measured with the diode subjected to direct sunlight and to various levels of simulated sunlight. Author

Author(s):
Kaloi, C. M.
Author Organization(s):
NAVAL ORDNANCE LAB CORONA CALIF
Annotation:
Silicon photodiode responsivity, frequency response, noise-equivalent power, spectral response, and dynamic impedance under background radiation conditions.
Pagination:
0044

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
NOLC-595
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTOR DIODES, *SILICON, INTERFERENCE, BACKGROUND, PHOTOELECTRIC EFFECT, SOLAR RADIATION, DETECTORS, PHOTOCONDUCTIVITY, MEASUREMENT
Report Date:
1964 Mar 01