IMPURITY EFFECTS IN NEUTRON-IRRADIATED SILICON AND GERMANIUM.

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Abstract:

The influence of dopant impurities and oxygen on the degradation of the electrical properties of silicon by neutrons was investigated. Arsenic, phosphorous gallium and boron were utilized as dopants over a wide range of carrier concentrations in material grown by different techniques. The effects of neutron irradiation on carrier lifetime, mobility, and carrier concentration were measured as a function of temperature and annealing. No dependence of the rate of lifetime degradation on impurity was observed, although some differences were seen in carrier concentration and mobility changes. Author

Author(s):
Curtis, O. L., Jr. ; Bass, R. F. ; Germano, C. A.
Author Organization(s):
NORTRONICS NEWBURY PARK CA APPLIED RESEARCH DEPT
Descriptive Note:
Final rept.,
Annotation:
Impurity effects in neutron-irradiated silicon and germanium.
Pagination:
0146

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
235-1, NARD-65-20-R
Contract/Grant Number(s):
DA-49-186-AMC-235(X)
Project Number(s):
HDL-23523
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*DAMAGE, *SEMICONDUCTORS, IMPURITIES, DEGRADATION, SILICON, NEUTRONS, ARSENIC, PHOSPHORUS, GALLIUM, BORON, INJECTION, ANNEALING, PHOTOCONDUCTIVITY, PERFORMANCE(ENGINEERING), DOPING, FAILURE(MECHANICS), HALL EFFECT, NITROGEN, LIQUIDS, X RAYS, EXCITATION, EXCITATION
Field(s)/Group(s):
Solid State Physics
Report Date:
1965 Nov 01