FAILURE MECHANISMS IN SEMICONDUCTOR DIODES.

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Abstract:

Efforts concern a program to investigate the physical and chemical mechanisms which contribute to long term degradation of diode parameters. The entire program includes work elements of isolation of the mechanisms, establishment of the mechanism characteristic rates, determination of probability of occurrence factors for processing variables and the proposal and verification of deterministic and probabilistic mathematical models including these factors. The first section of this report presents the background information for the silicon planar epitaxial diodes chosen as the vehicles for the program. The second section discusses the last manufacturing process steps and the test flow of the diodes. The results of the physics of failure studies and the planned work effort in this area are contained in the third section. Author

Author(s):
Bair, Byron L.
Author Organization(s):
GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
Descriptive Note:
Semiannual rept. no. 1, 4 Jan-3 Jul 65,
Annotation:
Failure mechanisms in semiconductor diodes.
Pagination:
0104

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RADC-TR-65-326
Contract/Grant Number(s):
AF30(602)-3624
Task Number(s):
551906
Project Number(s):
AF-5519
Monitor Series:
TR-65-326
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTOR DIODES, *FAILURE(ELECTRONICS), CHEMICAL PROPERTIES, DEGRADATION, ELECTRICAL PROPERTIES, PROBABILITY, PROCESSING, MATHEMATICAL MODELS, SILICON, EPITAXIAL GROWTH, MANUFACTURING, RELIABILITY(ELECTRONICS)
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1965 Dec 01