GALLIUM ARSENIDE SURFACE STATES,

reportActive / Technical Report | Accession Number: AD0442564 | Need Help?

Abstract:

Pulsed field effect measurements were performed under atmospheric conditions on GaAs 111 surfaces prepared by various treatments. The results obtained with A and B 111 surfaces of n and p-type GaAs are summarized. Only the surface states with time constants between 0.00001 and 0.001 sec. could be determined under the experimental conditions used. The temperature range employed was 240 to 370 K. The density of the surface states could only be determined approximately and was found to be 10 to the 10th to 10 to the 11th power per sq cm. Author

Author(s):
Kawaji, Shinji
Author Organization(s):
MASSACHUSETTS INST OF TECH CAMBRIDGE
Pagination:
0009

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
Nonr396305
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*GALLIUM COMPOUNDS, SURFACE PROPERTIES), (*SURFACES, CRYSTALS), (*ARSENIDES, GALLIUM COMPOUNDS), ELECTRONS, ELECTRON TRANSITIONS, ETCHED CRYSTALS, IMPURITIES, ELECTRON DENSITY, DIFFUSION, CONDUCTIVITY, SEMICONDUCTORS
Keyword(s):
ETCHANTS, CRYSTALS
Report Date:
1964 Apr 01