HIGH ELECTRIC FIELD EFFECTS IN P-N JUNCTIONS. FAST BREAKDOWNS,

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Abstract:

The transit time of electrons across a p-n junction in which an electric field of 10 times vm is present is investigated and proven to be about l picrosecond. It is shown that carrier distribution adds about 25 per cent to this time when a pulse is considered and that increasing the applied voltage does not necessarily decrease the transit time. The energy exchange between electric field, carriers, and lattice is investigated and a cause of random pulse formation suggested from the results. Experimental results are presented, obtained on Si junctions in which breakdowns occur. It is suggested that small breakdowns are established at speeds too fast for conventional oscilloscopes of sufficient sensitivity. It is proposed that the experimental technique of photon stimulation used here be further refined to allow the display of the true waveshape in time of microplasma breakdown. Author

Author(s):
Van Biljon, L.
Author Organization(s):
ILLINOIS UNIV URBANA DIGITAL COMPUTER LAB
Annotation:
High electric field effects in P-N junctions.
Pagination:
0070

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
159
Contract/Grant Number(s):
Nonr1834 15
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SWITCHING CIRCUITS, SILICON, CYCLOTRON RESONANCE, CAPACITANCE, PHONONS, ELECTRICAL RESISTANCE, OSCILLOSCOPES, THERMAL CONDUCTIVITY, CRYSTAL LATTICES, SCATTERING, TRANSPORT PROPERTIES, TEMPERATURE, PHOTONS, EMISSIVITY
Keyword(s):
P N JUNCTIONS
Report Date:
1964 Jan 20