EVAPORATED THIN-FILM DEVICES.

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Abstract:

Research concerned thin-film devices which had evaporated. The operating characteristics of the insulated-gate thin-film transistor TFT are shown in good agreement with a simple field-effect analysis. A coplanar-electrode TFT structure has yielded improved performance and is simpler to fabricate than the earlier staggeredelectrode structure. A p-type TFT, having excellent enhancement-type characteristics, was made using evaporated tellurium as the semiconductor. Studies of mobility in the space-charge layer using the TFT as a research tool have shown the existence of barriers between crystallites in a polycrystalline cadmium sulfide film. Author

Author(s):
Borkan, H. ; Henrich, V. E. ; Shallcross, F. V. ; Waxman, A. ; Weimer, P. K.
Author Organization(s):
RCA LABS PRINCETON NJ
Descriptive Note:
Final rept., 1 June 62-30 Sep 63,
Annotation:
Evaoprated thin-film devices. Insulated-gate thin-film transistor. Tellurium and cadmium sulfide films.
Pagination:
0058

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFCRL-63-529
Contract/Grant Number(s):
AF19 628 1617
Task Number(s):
460804
Project Number(s):
AF-4608
Monitor Series:
63-529
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
SEMICONDUCTING FILMS, TRANSISTORS, ELECTRICAL INSULATION, ELECTRODES, VAPOR PLATING, TELLURIUM, SPACE CHARGE, CADMIUM COMPOUNDS, SULFIDES, SURFACE PROPERTIES, FIXED CONTACTS, SEMICONDUCTOR DIODES, HALL EFFECT, ELECTRICAL RESISTANCE
Keyword(s):
CARRIER MOBILITY, THIN FILMS
Report Date:
1963 Oct 31