THIN FILM ACTIVE DEVICES

reportActive / Technical Report | Accession Number: AD0408472 | Open PDF

Abstract:

The use of evaporated, rather than thermally grown, layers of Al2O3 has alleviated the shorting problem in the MEA tunnel emission device. High input impedance devices showing transconductance values as high as 25,000 micro mhos have been obtained in this way. A tentative equivalent circuit for the device is presented. Studies of the conduction processes in CdS-Al2O3-Al diodes continue. Thin films of CdS show resistivities of approximately 0.1 ohm-cm, mobilities of 10 cm squaredV-sec, and carrier concentrations of 7 x 10 to the 18th powercm cubed.

Author(s):
Spratt, James P.
Author Organization(s):
PHILCO CORP BLUE BELL PA
Descriptive Note:
Quarterly rept. no. 2, 22 Sep-22 Dec 1962
Pagination:
0087

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DA-49-186-ORD-1056
Monitor Series:
HDL
 Subject Terms
Joint Capability Areas:
JCA_5.3_Planning; JCA_5_Command and Control; JCA_4.1_Deployment and Distribution; JCA_1_Force Support; JCA_1.2.7_Experimentation; JCA_3.2_Engagement; JCA_3_Force Application; JCA_6.1.1_Wired Transmission; JCA_6.1.3_Switching and Routing
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTOR DIODES, *SOLID STATE ELECTRONICS, TEST EQUIPMENT, OXIDES, CAPACITANCE, CADMIUM, PHONONS, INDIUM
Field(s)/Group(s):
Solid State Physics, Electrical and Electronic Equipment
Keyword(s):
METAL INTERFACE AMPLIFIERS, THIN FILM ELECTRONICS, THIN FILMS
Report Date:
1962 Dec 22