ELECTRICAL RESISTIVITY OF SEMICONDUCTING DIAMOND

reportActive / Technical Report | Accession Number: AD0407912 | Open PDF

Abstract:

Semiconducting diamond with its wide energy gap, favorable current carrier mobility, and good mechanical properties holds promise of being a useful high temperature semiconductor material. The data covered include electrical resistivity measured from room temperature to 500 degrees C in an inert atmosphere. Over the lower temperature ranges, below approximately 250 degrees C, the temperature coefficient of resistivity is high, negative, and nonlinear. At the higher temperatures the coefficient rapidly becomes much smaller. A resistivity minimum is observed between 350 and 400 degrees C. The results constitute part of a program involving studies of relationships between defects in the diamond crystal structure and its semiconducting properties.

Author(s):
Johnson, A. D. ; Wielhouwer, J. P. ; Littler, J. R.
Author Organization(s):
AIR FORCE CAMBRIDGE RESEARCH LABS HANSCOM AFB MA
Supplementary Note:
DOI: 10.21236/AD0407912
Pagination:
0028

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFCRL-62-561
Monitor Series:
62-561, AFCRL
 Subject Terms
Joint Capability Areas:
JCA_6.4.1_Secure Information Exchange
Communities of Interest:
Advanced Electronics
Descriptor(s):
*HIGH TEMPERATURE, *DIAMONDS, *ELECTRICAL RESISTANCE, *SEMICONDUCTORS, MEASUREMENT, ELECTRIC TERMINALS, SCIENTIFIC RESEARCH, TEMPERATURE COEFFICIENT OF REACTIVITY, SPACE CHARGE, CRYSTALS, CONTAMINATION, MECHANICAL PROPERTIES
Field(s)/Group(s):
Solid State Physics
Report Date:
1962 Sep 01