THE MATERIAL LIMITATIONS OF TUNNEL DIODE COMMUNICATIONS CIRCUIT PERFORMANCE

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Abstract:

No Abstract Identified

Author(s):
Shepherd, F. D. Jr. ; Yang, A. C. ; Vickers, V.
Author Organization(s):
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Annotation:
MATERIAL LIMITATIONS OF TUNNEL DIODE COMMUNICATIONS CIRCUIT PERFORMANCE.
Pagination:
0001

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DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
63 2
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*CIRCUITS, *SEMICONDUCTOR DIODES, BANDWIDTH, ELECTRIC CURRENT, VOLTAGE, FREQUENCY, GERMANIUM, GROUP III COMPOUNDS, GROUP V COMPOUNDS, HIGH FREQUENCY, IMPURITIES, INTEGRAL EQUATIONS, MANUFACTURING, NOISE(RADIO), PROCESSING, SILICON
Keyword(s):
GROUP 5 ELEMENTS, GROUP 3 ELEMENTS, GROUP 4 ELEMENTS
Report Date:
1963 Jan 01