HIGH VOLTAGE SILICON RECTIFIER STACKS

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Abstract:

Design testing of the third engineering samples was started. The first unit of the fourth engineering samples was built having an internal expansion chamber, corona endshields and a lesser number of higher voltage rectifier diodes. Thermal measurements confirmed closely the original calculations of temperature rise for the rectifier stack. The reduction in the number of rectifier diodes in the fourth engineering samples reduces the temperature rise appreciably. Author

Author(s):
Luft, Werner
Author Organization(s):
INTERNATIONAL RECTIFIER CORP LOS ANGELES CALIF
Annotation:
PRODUCTION ENGINEERING MEASURE FOR DIODES, HIGH VOLTAGE, SILICON RECTIFIER STACK. DESIGN, MANUFACTURE OF SAMPLES, AND TESTING.
Pagination:
0001

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*DIODES, *RECTIFIERS, *SEMICONDUCTORS, CAPACITORS, DESIGN, DIRECT CURRENT, ELECTRIC FIELDS, ELECTRIC POTENTIAL, ELECTRICAL CORONA, MEASUREMENT, MECHANICAL PROPERTIES, RESISTORS, SILICON, TEMPERATURE, TEST EQUIPMENT, TEST METHODS, TEST SETS
Report Date:
1962 Sep 01