SEMICONDUCTOR THIN FILMS

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Abstract:

Research was conducted to study the deposition of GaAs films and to determine their photoconductivity, barrier contact and photovoltaic effects. No definite effect of deposition rate of Ge on epitaxial temperature was observed. The GaAs deposition procedure was modified polycrystalline deposits of GaAs were obtained. No correlation of composition of the source material with crystal perfection was observed. Evaporation rates of various particle sizes of source GaAs were calculated. More precise estimation of film thicknesses less than 5000 angstroms were made by using an estimated index of refraction of 3.3 for Na light in GaAs. It was indicated that the properties of a thin semiconductor film on a dielectric cannot be reliably predicted.

Author(s):
Axelrod, J. M.
Author Organization(s):
LEAR INC GRAND RAPIDS MICH
Annotation:
A STUDY OF THE DEPOSITION AND GROWTH OF GE AND GAAS THIN FILMS ON GRAPHITE AND CAF2 SUBSTRATES. PROCESSING AND RESISTIVITY MEASUREMENTS THICKNESSES.
Pagination:
0001

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
AF33 657 7623
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ARSENIDES, *GALLIUM COMPOUNDS, *SEMICONDUCTORS, *THIN FILM STORAGE DEVICES, CALCIUM COMPOUNDS, CERIUM COMPOUNDS, DIOXIDES, ELECTRODEPOSITION, ELECTRON MICROSCOPY, FLUORIDES, GERMANIUM, GRAPHITE, GROWTH(PHYSIOLOGY), IMPURITIES, INTERMETALLIC COMPOUNDS, PROCESSING, PRODUCTION, ELECTRICAL RESISTANCE, SINGLE CRYSTALS, THICKNESS, TIN, X RAY DIFFRACTION
Keyword(s):
THIN FILMS
Report Date:
1962 Apr 30