EPITAXIAL GROWTH OF SILICON

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Abstract:

Epitaxial growth of silicon on a silicon substrate by hydrogen reduction of SiCl4 was investigated. The chemical and physical processes involved in both the growing and the preceding heat treatment processes were studied and correlated to the experimental results. Epitaxially grown single crystal silicon layers were produced at temperatures between 1100 and 1300 C. The effects of the concentration of SiCl4 in H2, the flow rate of the gas, the temperature and the surface condition of the substrate on the overall performance of the process were investigated. Author

Author(s):
Revesz, A.
Author Organization(s):
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Pagination:
0001

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DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
*SEMICONDUCTORS, *SILICON, *THIN FILM STORAGE DEVICES, CHLORIDES, EPITAXIAL GROWTH, GROWTH(PHYSIOLOGY), HIGH TEMPERATURE, IMPURITIES, MANUFACTURING, METAL COATINGS, REDUCTION, SILICON COMPOUNDS, TRANSPORT PROPERTIES, VAPOR PLATING, VAPORS
Keyword(s):
THIN FILMS, METALLIC SMOKE DEPOSITS
Report Date:
1961 Dec 01