COMPATIBLE TECHNIQUES FOR INTEGRATED CIRCUITRY

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Abstract:

Most of the effort to date has been spent in developing process techniques which are necessary for integrated circuit fabrication. This effort has been both in morphological areas and thin films as applied to semiconducting substrate. Further efforts in perfecting our epitaxial techniques are reported. A program has been started to develop and fabricate typical circuits which are practical for a wide range of high and low frequency amplifier applications as well as logic circuits.

Author(s):
No Author(s) Identified
Author Organization(s):
MOTOROLA INC PHOENIX AZ
Descriptive Note:
Quarterly rept. no. 3, 1 Nov 1961-31 Jan 1962
Pagination:
0078

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
AF 33(616)-8276
Monitor Series:
ASD
 Subject Terms
Joint Capability Areas:
JCA_6_Net Centric; JCA_6.1.1_Wired Transmission; JCA_6.1_Information Transport; JCA_5_Command and Control; JCA_1.2.7_Experimentation; JCA_1_Force Support; JCA_5.3_Planning; JCA_6.4.1_Secure Information Exchange
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*INTEGRATED CIRCUITS, *SEMICONDUCTORS, MANUFACTURING, GALLIUM ARSENIDES, EPITAXIAL GROWTH, CRYSTALS, SILICON, ARSENIDES, NICKEL ALLOYS, SILICON COMPOUNDS, RESISTORS, CAPACITORS, DIOXIDES, CHROMIUM ALLOYS, TANTALUM CAPACITORS
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
THIN FILM ELECTRONICS, THIN FILMS, THIN FILMS(STORAGE DEVICES)
Report Date:
1962 Apr 01