70 MC, 1 WATT, SILICON TRANSISTOR

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Abstract:

INVESTIGATIONS WERE CONTINUED IN THE DEVELOPMENT OF A MANUFACTURING PROCESS TO DEVELOP A PRODUCTION LINE FOR A 70 MC, 1 WATT SILICON TRANSISTOR. The planar-constructed preproduction samples were fabricated and the results of some of the testing were analyzed. Additional life test storage data for 3000 hours from the first group of planar transistors showed the desirability of this design. Illustrations showing the change of testing requirements with various parameters are presented for the planar device. An interesting effect was observed during the initial stages of planar construction. When the transistor junctions were reversed biased at collector currents of approximately 50 ma, the junctions broke down and pinpoints of light were observed along the base-collector and base-emitter junctions. Author

Author(s):
Freeman, W. J. Iii
Author Organization(s):
RADIO TECHNICAL COMMISSION FOR AERONAUTICS WASHINGTON D C
Pagination:
0001

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*MANUFACTURING, *OSCILLATORS, *TRANSISTOR AMPLIFIERS, *TRANSISTORS, DIOXIDES, FAILURE(MECHANICS), HIGH TEMPERATURE, LIFE EXPECTANCY(SERVICE LIFE), PROCESSING, PRODUCTION, RADIOFREQUENCY AMPLIFIERS, RADIOFREQUENCY OSCILLATORS, SILICON, SILICON COATINGS, STORAGE, TEST METHODS, VERY HIGH FREQUENCY
Report Date:
1961 Mar 05