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The Role of Chemical and Structural Disorder at Buried Interfaces in Hexaferrite Heterostructures: Implications to Microwave Integrated Electronics


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The main objective of this program was the systematic study to establish fundamental interrelationships in the processing-structure-property paradigm in the epitaxial growth of hexaferrites on wideband gap substrates with proper strain-mediating buffer layers. These findings provide a viable path to the development of next generation magnetic mm-wave devices that are planar and low-loss and monolithically integrated with active semiconductor device platforms. Objective 1: To explore the interrelationships between thin film growth dynamics (i.e., pulsed laser energy and density, substrate temperature, background pressure, component geometries) and fundamental (atomic and electronic structure and defects) and functional properties (i.e., magnetization, coercivity, retention, permeability, permittivity and related losses) as they pertain to the performance of materials and rf passive devices operating at mm-wavelengths (i.e., insertion loss, isolation, return loss). Principle characterization techniques include x-ray diffraction and electron microscopy, including high-resolution transmission electron microscopy. Objective 2: To explore the interrelationships between film growth dynamics upon the properties of interfaces formed at the boundary of substrate and nucleation layers, and nucleation layers and the magnetodielectric film (i.e., hexaferrite). Such techniques as cross-sectional HR-TEM to quantitatively investigate the structural, chemical and defect properties of the interfacial region.



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