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Accession Number:
AD1208248
Title:
Damage Assessment of InGaP-based Power Devices Exposed to Simulated Alpha Radiation
Report Date:
2023-08-16
Abstract:
The effects of radiation damage on an indium gallium phosphide (InGaP) beta-voltaic PIN diode and a zinc sulfide/InGaP beta-photovoltaic structure were evaluated by exposing both materials to a beam of 4.5-MeV helium ions as a surrogate for exposure to alpha particles. These measured results will influence the choice of semiconductor and phosphor materials for use in long-lived radioisotope power sources.
Document Type:
Conference:
Journal:
Pages:
41
File Size:
1.71MB
Contracts:
Grants:
Distribution Statement:
Approved For Public Release
