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Accession Number:

AD1208248

Title:

Damage Assessment of InGaP-based Power Devices Exposed to Simulated Alpha Radiation

Author(s):

Author Organization(s):

Report Date:

2023-08-16

Abstract:

The effects of radiation damage on an indium gallium phosphide (InGaP) beta-voltaic PIN diode and a zinc sulfide/InGaP beta-photovoltaic structure were evaluated by exposing both materials to a beam of 4.5-MeV helium ions as a surrogate for exposure to alpha particles. These measured results will influence the choice of semiconductor and phosphor materials for use in long-lived radioisotope power sources.

Pages:

41

File Size:

1.71MB

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Distribution Statement:

Approved For Public Release

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