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Accession Number:

AD1189162

Title:

Novel High Quality GeSn Alloys for Mid-Infrared Photodetectors

Author(s):

Author Organization(s):

Report Date:

2022-11-07

Abstract:

Intense research interest in GeSn alloys in recent years has been fuelled by their potential for efficient light absorption in the near-to-mid infrared (IR), the possibility of mid-IR lasers, and their ready compatibility, including integration with Si fabrication. This project, which has been a 3 way collaboration between ANU, AFRL at Wright Patterson Labs, and ARDEC Benet Labs, has focussed on three areas: i) full characterisation at ANU of a range of CVDgrown structures from AFRL on both Ge and Si substrates; ii) production of GeSn and GePb alloys on Ge substrates by a combination of ion implantationat ANU and pulsed laser melting (PLM) at ARDEC; iii) use of implantation/PLM to dope CVD-grown GeSn films, and to try to reduce the defect density in relaxed CVD-grown GeSn films grown on Si. Despite the impact of COVID, and COVID-induced lockdown of laboratories, considerable significant achievements have been achieved in all 3 projects areas. In area i) CVD-grown GeSn layers on Si of various Sn content have been fully assessed, and a publication is in the final stages of preparation. A range of superlattice structures have been successfully characterised by ion channelling (RBS-C) and electron microscopy (TEM): with some further TEM, a publication will be possible. In area ii), a publication on relaxed GeSn layers produced by ion implantation/PLM has been published, and the first dilute GePb films have produced. The latter results can be published with a little further TEM analysis. In the third area, both the Intense research interest in GeSn alloys in recent years has been fuelled by their potential for efficient light absorption in the near-to-mid infrared (IR), the possibility of mid-IR lasers, and their ready compatibility, including integration with Si fabrication.

Pages:

20

File Size:

2.13MB

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Distribution Statement:

Approved For Public Release

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