View The Document

Accession Number:

AD1175081

Title:

Fundamental and Applied Wide Bandgap Semiconductor Device Modeling For Next Generation Naval Applications

Author(s):

• Khanna, Raghav

Author Organization(s):

• TOLEDO UNIV OH

Report Date:

2022-07-25

Abstract:

This final report provides a synopsis of the progress made by Dr. Raghav Khannas research team at The University of Toledo (UT) during the entire performance period of the grant indicated on the title page. Several projects were undertaken during the performance period, each of which will be elucidated in greater detail in subsequent sections of this report.

Document Type:

Conference:

Journal:

Pages:

19

File Size:

2.29MB

Contracts:

Grants:

Descriptors:

Identifiers:

• High-Frequency Dispersion Effects
• gan (GALLIUM NITRIDES)
• gan devices
• Dispersion Effects
• tcad (technology-computer aided design)

SubjectCategory:

• Electrotechnology and Fluidics

Communities of Interest:

• Advanced Electronics

Distribution Statement:

Approved For Public Release

View The Document