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Accession Number:
AD1122844
Title:
Gallium Nitride (GaN) RF Challenge: BAE Systems and Qorvo Submissions
Report Date:
2021-02-09
Abstract:
The DOD Gallium Nitride (GaN) RF Challenge is enabling development and fabrication of the best-competed concepts for high-performance, efficient broadband Monolithic Microwave Integrated Circuits (MMICs) related to the 5G expansion and to critical EW needs. The US Army Combat Capabilities Development Command Army Research Laboratory was one of the design teams for the BAE 0.18-m GaN multi-project wafer fabrication and was also one of the design teams for the Qorvo 0.15-m GaN multi-project wafer fabrication. This technical note is a brief overview of the DEVCOM Army Research Laboratory design submissions for the GaN RF Challenge.
Document Type:
Conference:
Journal:
Pages:
12
File Size:
9.37MB
Contracts:
Grants:
Distribution Statement:
Approved For Public Release
