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Accession Number:

AD1112814

Title:

Near Infrared Photo-detection with Monolayer Heterostructures

Author(s):

• Lee, Yi-Hsien

Author Organization(s):

• NATIONAL TSING HUA UNIVERSITY

Report Date:

2020-10-14

Abstract:

Further fabrication and demonstration of the devices of the TMD heterostructures based on CVD-grown samples for NIR photodetection and the interlayer transition were accomplished, which will enable further development of next-generation large area or wafer-scale infrared optoelectronics.

Document Type:

Conference:

Journal:

Pages:

12

File Size:

1.61MB

Contracts:

Grants:

Descriptors:

• materials science
• two-dimensional materials
• semiconductors
• materials
• advanced materials
• energy bands
• optical properties
• chemical vapor deposition
• electronic mail
• optoelectronics
• photodetectors
• low temperature
• materials laboratories
• air force research laboratories
• engineering
• materials engineering
• measurement
• compound semiconductors
• detection
• electronics laboratories

Identifiers:

• Monolayer Heterostructures
• nir (near infrared radiation)
• nir devices
• linear array photodiodes
• tmd (transition metal dichalcogenides)
• tmd heterostructures
• cvd (chemical vapor deposition)
• nir photodetection
• interlayer transitions

SubjectCategory:

• Navigation, Detection and Countermeasures
• Electrotechnology and Fluidics

Communities of Interest:

• Advanced Electronics

Distribution Statement:

Approved For Public Release

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