Accession Number:

ADP007998

Title:

Indium Ohmic Contacts to n-ZnSe,

Personal Author(s):

Corporate Author:

FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1992-07-01

Abstract:

The reaction between an indium overlayer and high purity MBE grown n-ZnSe chlorine doped 2xlOl8 CM-3 epilayers has been investigated using X-ray diffraction, Rutherford backscattering spectroscopy, Xray photoelectron and Auger electron spectroscopy, and by electrical function tests I-V and C-V . Good ohmic contacts were formed after annealing at 250 deg C or 300 deg C for a few minutes in forming gas. Annealing at lower or higher temperatures resulted in higher resistance or rectifying contacts. The data show that no compounds were formed at the interface instead In appeared to diffuse into the ZnSe. High surface doping densities appear to allow an ohmic contact, but the electrical data suggest that compensation effects are also very significant in formation of the contact. These effects must be considered for successful formation of the ohmic contact.

Supplementary Note:

This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,' AD-A254 162, p134-141.

Pages:

0008

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0.00MB

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