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Accession Number:
ADP007995
Title:
Direct Observation of GaAs Surface Cleaning Process Under Hydrogen Radical Beam Irradiation,
Corporate Author:
NEC CORP TSUKUBA (JAPAN) OPTO-ELECTRONICS RESEARCH LABS
Report Date:
1992-07-01
Abstract:
Recently dry etching techniques have been adopted for surface cleaning of III-V compound semiconductors. The effectiveness of hydrogen H radical beam produced by electron cyclotron resonance ECR plasma for low-temperature surface cleaning has been successfully demonstrated. Removal of oxygen contamination on the GaAs substrate has been performed by H radical beam irradiation. This radical beam, which consists of only neutral radicals, is supposed to be free from surface damages caused by ion bombardment. Although the deoxidation of the native oxide layer resulting from the introduction of the H radical has been attributed as the factor leading to the removal of the oxygen contamination, there has yet to be any direct observation of such a chemical reaction.
Supplementary Note:
This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,' AD-A254 162, p122-125.
Pages:
0004
File Size:
0.00MB
