There has been increasing interest in in-situ processing to avoid interface degradation which is an important problem in the III-V semiconductor technology. For in-situ processing involving regrowth of semiconductor layers, lithography techniques which can be integrated into vacuum processes are essential. In-situ pattern processing using focused ion beams FIB and electron beams EB has been demonstrated recently. In those works, however, very thin semiconductor oxide films which act as resists are not durable enough to allow the fabrication of fine and high-aspect-ratio patterns on substrate surfaces. moreover, maskless pattern formation by FIB-assisted etching has a serious problem of ion-induced damage.
This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,' AD-A254 162, p96-99.