Accession Number:

ADP007982

Title:

Characterization of Strained Heterostructures by Cathodoluminescence,

Personal Author(s):

Corporate Author:

TECHNISCHE UNIV BERLIN (GERMANY F R)

Report Date:

1992-07-01

Abstract:

Cathodoluminescence CL provides information about the local variation of the defect structure, the impurity incorporation and the electronic bandstructure of semiconductor layers which might be buried below the surface. It is particularly useful for the non-destructive characterization of device structures. In this paper we review some of recent results on strained layer structures. As model systems we investigate In0.23Ga0.77AsGaAs-, InPSi- and locally deposited GaAsSi-layers.

Supplementary Note:

This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,' AD-A254 162, p68-71.

Pages:

0004

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File Size:

0.00MB

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