DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADP007981
Title:
Ga0.47In0.53As/InP Multiquantum Well Structures Observed by Scanning Tunneling Microscopy under Ultrahigh Vacuum,
Corporate Author:
NIPPON TELEGRAPH AND TELEPHONE CORP IBARAKI OPTO-ELECTRONIC LABS
Report Date:
1992-07-01
Abstract:
Multiquantum wells MQWs are being widely applied to various electronic and optoelectronic devices. It is of vital importance to characterize MQW structures such as period, uniformity of barrier and well layers and abruptness of hetero-interfaces as exactly as possible. A scanning tunneling microscope STM is considered as a useful tool to observe MQW structures with a high resolution. However, only a few data on this issue have been reported.
Supplementary Note:
This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,' AD-A254 162, p64-67.
Pages:
0004
File Size:
0.00MB
