FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
As the band gaps of semiconductors are increasing, there are more and more problems to achieve large doping levels and good ohmic contacts to measure the carrier concentrations N and mobilities micron by Hall effect. On the other hand, as the devices structures contain more and more layers, in situ control at each processing step becomes more and more necessary. A solution of both problems might be contactless determination of N and u from infrared IR reflectivity. In the following, we give the physical and analytical bases of such determinations, and show examples of derivation of optical N and micron on bulk GaAs and thin films of ZnSe.
This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,'AD-A254 162, p46-49.