DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADP007971
Title:
In Situ Mass Spectrometric Analysis of the Mechanism of Selective-Area Epitaxy by MOMBE,
Corporate Author:
NIPPON TELEGRAPH AND TELEPHONE CORP IBARAKI OPTO-ELECTRONIC LABS
Report Date:
1992-07-01
Abstract:
To understand the growth mechanism of metal-organic molecular beam epitaxy MOMBE, an analysis of the chemical species involved in the growth reaction was made by in situ mass spectrometry. We have reported that the decomposition of metal-organics MOs is largely affected by the surface material. Hence, it is expected that selective-area epitaxy can be carried out by utilizing the difference between the reaction characteristics on a bare semiconductor surface and those on a masked surface. In this paper we report on the results of mass spectrometric measurements of the species desorbed from various substrates under MOMBE growth conditions. Preliminary results for a novel in situ selective-area epitaxy of GaAs using a thin oxide layer of GaAs as a mask is also presented-5.
Supplementary Note:
This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,'AD-A254 162, p25-28.
Pages:
0004
File Size:
0.00MB
