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Accession Number:
ADP007935
Title:
Formation of Submicrometer Carbonaceous Islands during SEM Examination of Thin GaAs Layers on Si Substrates,
Corporate Author:
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Report Date:
1992-05-22
Abstract:
In the course of investigating the initial stages of GaAs growth on Si substrates by molecular beam epitaxy MBE, we have discovered an electron-beam-induced growth process that can occur during scanning electron microscope SEM examination of samples with a sufficiently thin deposit of GaAs. When such a sample is transferred from the MBE system to the SEM with only a brief exposure to air, a circular island forms at any location on the surface where the SEM electron beam is allowed to dwell. The diameter of such islands increases from about 500 to 2500 A as the dwell time is increased from about 1 min to over 10 min. Carbon was the only element detected when the islands were analyzed by an Auger microprobe after surface contamination was removed by sputtering.
Supplementary Note:
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-A254 135,p149-156.
Pages:
0008
File Size:
0.00MB
