Hydrogenated, amorphous silicon a-SiH is of great interest for thin film devices used, for example, for the transformation of photon energy and as semiconductor material. Important applications are thin film solar cells, thin film transistors for liquid crystal displays, photoreceptors for electrophotography and laser printing and image sensors. To improve and optimize the properties of the material for specific applications it is necessary to control the formation of the three dimensional network during the solidification process bandgap engineering. Incorporation of hydrogen into the network reduces the density of defects near the middle of the bandgap gap states . For optimal performance a specific binding configuration should be realized. Distortions in the metastable silicon network, especially in the bond angle, are believed to be responsible for the tail states at the bandgap edges.
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-254 135, p86-87.