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Accession Number:
ADP007916
Title:
Adsorption and Desorption Kinetics for Si(Csub 2 H sub 5)Sub 2 H sub 2 on Si(111) 7x7,
Corporate Author:
STANFORD UNIV CA DEPT OF CHEMISTRY
Report Date:
1992-05-22
Abstract:
Diethylsilane DES, SiC2H52H2, is a promising candidate for the atomic layer epitaxy of silicon. Alkylsilanes are advantageous because they are less toxic and flammable than silanes. The reactions of organosilanes with silicon surfaces are also important both fundamentally and technologically. This study explored the adsorption and desorption kinetics for SiC2H52H2 on Si111 7x7 using laser induced thermal desorption LITD and temperature programmed desorption TPD technique.
Supplementary Note:
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-254-135, p72-75.
Pages:
0004
File Size:
0.00MB
