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Accession Number:
ADP007915
Title:
State Specific of the Laser Induced Desorption of NO from Si 111,
Corporate Author:
NATIONAL INST OF STANDARDS AND TECHNOLOGY GAITHERSBURG MD
Report Date:
1992-05-22
Abstract:
A wide variety of chemical processes at semiconductor surfaces have been observed to be promoted by radiation. The possible mechanisms for the transfer of the initial photon energy to the reaction coordinate are many, including simple substrate heating, substrate carrier driven reactions, and localized adsorbate photoexcitation. State-resolved studies of laser-induced reaction products have proven extremely illuminating as they often allow the distinction and quantification of various competing excitation mechanisms. We present the results of a state-resolved study of the laser-induced desorption LID of NO from Si111 in which the energy partitioning in the desorbed NO is found to vary dramatically with the initial NO coverage due to the presence of competing excitation channels.
Supplementary Note:
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-254-135, p68-71.
Pages:
0004
File Size:
0.00MB
