COLUMBIA UNIV NEW YORK MICROELECTRONICS SCIENCE LAB
We have studied the UV laser-induced interaction of molecular chlorine with a GaAs110 surface under ultra-high vacuum UHV conditions. Unlike previous studies of this system, we concentrated on well-defined surfaces, known coverages and low laser fluences. The experimental setup included a low energy electron diffraction apparatus, an Auger electron spectrometer and a differentially pumped mass spectrometer for thermal desorption spectra TDS and time-of-flight TOF measurements. Without illumination, chlorine was found to adsorb molecularly and dissociatively on n-GaAs110 surfaces at 85 K. The laser experiments were done with a 193- and 351-nm excimer laser, at fluences below 5 mJcm2. Illumination of a molecular chlorine-covered surface at 85 K with 193 nm excimer laser radiation led to the formation of AsCI3, which desorbed at 180 K. Illumination with 351-nm radiation resulted in the formation of smaller amounts of arsenic chloride on the surface.
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-254-135, p58-61.