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Accession Number:
ADP007912
Title:
Mechanism of Chemical Etching of Doped GaAs by C1 2,
Corporate Author:
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
Report Date:
1992-05-22
Abstract:
Consideration of product volatility and thermodynamic stability have been central to models developed for the thermal etching and deposition of GaAs by C121,2 Mass spectrometric studies of the etching chemistry have tended to support sonic of the basic assumptions of these models that the thermodynamically most stable product is formed and that product volatility controls the etch rate. Surface analyses, for example, have revealed the presence of a Ga-rich scale after etching, to be expected if the As chlorides are more volatile and desorb more readily. Consequently, models of beam modification of GaAs in the presence of C12 have focussed on how energetic particles or light might perturb the thermal reaction. In this work the validity of the basis for these models has been examined by investigation of the etching chemistry of GaAs by molecular beam mass spectrometry and in situ Auger spectroscopy.
Supplementary Note:
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-254-135, p55-57.
Pages:
0003
File Size:
0.00MB
