Accession Number:

ADP007905

Title:

Electronically Induced Modifications of a-Si:H(P) Films by Scanning Tunneling Microscopy,

Personal Author(s):

Corporate Author:

UNIVERSITAET DER BUNDESWEHR MUENCHEN NEUBIBERG (GERMANY F R)

Report Date:

1992-05-22

Abstract:

We report local electronic modifications of phosphorus doped, hydrogenated amorphous silicon films a-siHP, on a nm-scale, by use of a Scanning Tunneling Microscope. High-quality a-SiHP layers 5 at. hydrogen were deposited by rf glow discharge techniques on heavily doped p-type Si substrate material. The film was doped by adding 1 PH 3 to the SiH 4 flux, resulting in a layer resistivity of 100 Ohm cm. Film thicknesses ranged between 300 OA to 5000 A. Depending on the tunnel conditions, mainly tunnel current and tunnel voltage, the STM can be operated in an imaging mode read cycle or in a surface modifying mode write cycle. Under normal tunneling conditions, at 3 V applied at the sample and 1 nA tunnel current, STM imaging does not alter the surface and the same area can be repeatedly scanned without any changes in the images.

Supplementary Note:

This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-A254 135,p29.

Pages:

0001

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0.00MB

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