Accession Number:

ADP007901

Title:

Coherent Strain Changes in Si-Ge Alloys Grown by Ion-Assisted Molecular Beam Epitaxy,

Personal Author(s):

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1992-05-22

Abstract:

Although low energy ion bombardment has been employed in various contexts epitaxial growth, such as enhanced dopant incorporation, surface cleaning during plasma enhanced chemical vapor deposition, and direct low energy ion beam deposition, key questions about the interaction of low energy ions with growing surfaces remain unanswered. Improved understanding of ion-surface interactions during growth may yield additional elements of control over epitaxial film structure, strain state, and composition. Of particular interest for high quality epitaxial films is the identification of the regime in which surface and near-surface processes, such as surface diffusion and incorporation at growth sites, can be enhanced at low temperatures while avoiding or controlling damage in the deposited films.

Supplementary Note:

This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 3. The Microphysics of Surfaces: Beam-Induced Processes. Held in Santa Fe, New Mexico on 11-13 Feb 1991,' AD-A254 135,p13-16.

Pages:

0004

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0.00MB

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