In this paper we demonstrate, for the first time, that impurity free vacancy diffusion IFVD can be applied to the post-growth fabrication of normal incidence devices, specifically asymmetric Fabry-Perot reflection modulators AFPM made from GaAsAlGaAs multiple quantum well MQW material. From the same wafer we have successfully produced both normally-off and normally-on devices, by achieving blue shifts of up to 52meV 30nm and maintaining clearly resolved heavy and light hole excitons. The results are significant for optoelectronic integrated circuit OEIC applications, where monolithic integration of devices performing different functions will be required.
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 7. Quantum Optoelectronics Held in Salt Lake City, Utah on 11-13 March 1991,' AD-A253 823, p299-302.