Accession Number:

ADP007863

Title:

Headband GaAs/A1(x)Ga(1-x)As Multi-Quantum Well LED,

Personal Author(s):

Corporate Author:

PLESSEY RESEARCH (CASWELL) LTD TOWCESTER (UNITED KINGDOM)

Report Date:

1992-05-22

Abstract:

A high power LED source has been designed and fabricated which allows broad band emission to be achieved over the wavelength range 700-900nm with low spectral ripple. The design is based on a GaAsAlxGal-xAs multi-quantum wells active region where each well is designed to emit at a different peak wavelength. The superposition of the emission spectra of the individual wells produces a broad band spectrum with many times the spectral width of a bulk device with a single active composition, which is typically 40nm. This is a candidate source for sensor applications such as analogue spectral filtering, in which broadband emission over - 100-200nm is typically required.

Supplementary Note:

This article is from 'Organization of the Optical Society of America Photonic science Topical Meeting Series. Volume 7. Quantum Optoelectronics Held in Salt Lake City, Utah on 11-13 March 1991,' AD-A253 823, p193-196.

Pages:

0004

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File Size:

0.00MB

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