Lattice-matched GaInAs to InP is being avidly investigated for increasing device applications in optoelectronics. Recent advancements of epitaxial growth techniques have made these applications possible using sophisticated multilayer heterostructures such as quantum wells QWs and modulation doping. Progress in this area has also made it possible to coherently grow an entire range of GaxIn1-xAs 0x1 on to InP while keeping these layers less than a critical thickness. These pseudomorphic materials have drawn an increasing attention for optical and electronic devices. Although these devices have been successfully fabricated and demonstrated promising performance, some fundamental characteristics of unstrained and strained materials still need to be explored. We have grown modulation doped 4xlO19cm-3 Gao.47In0.53As QWs and biaxially strained QWs using GaxIn1-xAsInP 0x0.32, compressive mode on InP and optically characterized.
This article is from 'Organization of the Optical Society of America Photonic science Topical Meeting Series. Volume 7. Quantum Optoelectronics Held in Salt Lake City, Utah on 11-13 March 1991,' AD-A253 823, p181-184.