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Accession Number:
ADP007845
Title:
Band Gap Renormalization in Quantum Confined Semiconductor Systems,
Corporate Author:
ZENTRALINSTITUT FUER ELEKTRONENPHYSIK BERLIN (GERMANY F R)
Report Date:
1992-05-22
Abstract:
The band gap renormalization BGR at high carrier densities is a many-body effect which has been studied intensively in the past for bulk semiconductor materials. The renewed inter in the BGR issue is stimulated by measurements on systems of reduced dimensionality like quantum wells or inversion lay A careful lineshape analysis of optical experiments is needed to extract reasonable BGR values. Interestingly enough these studies have revealed that the different sublevels do not shift at the same amount. This can be traced back to the well-documented non-rigid shift of the energy bands in the bulk since increasing sublevel numbers refer to increasing momentum in the growth direction.
Supplementary Note:
This article is from 'Organization of the Optical Society of America Photonic Science Topical Meeting Series. Volume 7. Quantum Optoelectronics Held in Salt Lake City, Utah on 11-13 March 1991,' AD-A253 823, p116-119.
Pages:
0004
File Size:
0.00MB
