Accession Number:

ADP007681

Title:

Photon-Assisted Resonant Tunneling through a GaAs/AlGaAs Multiple Quantum Well Structure,

Personal Author(s):

Corporate Author:

CHALMERS UNIV OF TECHNOLOGY GOETEBORG (SWEDEN)

Report Date:

1992-05-22

Abstract:

The use of bandgap engineering techniques to tailor the perpendicular transport characteristics of layered semiconductor structures has resulted in a variety of new phenomena and devices concepts . In particular the coherent interaction of electron waves reflected at interfaces gives rise to resonant tunneling effects which filter electrons of certain energy through the structure. A structure specifically designed for electron energy filtering is the variably spaced superlattice energy filter VSSEF in which the quantized states in adjacent quantum wells become aligned under appropriate bias conditions.

Supplementary Note:

This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p267-269.

Pages:

0003

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0.00MB

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