Accession Number:

ADP007678

Title:

Comparison of Oxygen Ion- and Proton-Implanted GaAs Photoconductive Switches,

Personal Author(s):

Corporate Author:

MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING

Report Date:

1992-05-22

Abstract:

Oxygen ion and proton implanted GaAs photoconductive PC switches which can be used for on-wafer characterization of GaAs MMICs have been evaluated. The Oxygen switch performed better in terms of switch sensitivity and bandwidth. It has been used to measure the S-parameter of a 3 stage 12 GHz MMIIC amplifier. A good agreement between the PC sampling technique and the network analyzer was achieved up to a 40 db dynamic range.

Supplementary Note:

This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p248-252.

Pages:

0005

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File Size:

0.00MB

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