Accession Number:

ADP007677

Title:

Transient Absorption of Low-Temperature Molecular-Beam Epitaxy Grown GaAs,

Personal Author(s):

Corporate Author:

MICHIGAN UNIV ANN ARBOR ULTRAFAST SCIENCE LAB

Report Date:

1992-05-22

Abstract:

We have applied time-resolved absorption spectroscopy to study the near-band-edge carrier dynamics of low temperature-MBE-grown GaAs, in order to directly observe the carrier relaxation and lifetime for this material.

Supplementary Note:

This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p244-247.

Pages:

0004

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0.00MB

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