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Accession Number:
ADP007675
Title:
Strained-Layers for Electronics and Optoelectronics,
Corporate Author:
SANDIA NATIONAL LABS ALBUQUERQUE NM
Report Date:
1992-05-22
Abstract:
The strain associated with intentionally lattice mismatched strained-layer heteroepitaxy provides a novel method for tailoring material band structure to enhance device performance through optimization of material structure. The applications of strained-layer epitaxy to heterojunction transistors and semiconductor lasers are presented.
Supplementary Note:
This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p236-241.
Pages:
0006
File Size:
0.00MB
