MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
A formalism is presented to study quantum transport properties of electrons in semiconductor heterostructures. The time evolution of multiband electronic states is determined by numerically solving the time dependent Schroedinger equation in the tight-binding representation. We have studied the transport of an electron wavepacket injected from AlxGa1-xAs across Gamma-Gamma and Gamma-X discontinuities into GaAs. The gross transport properties of the transmitted wavepacket are altered within a time scale of the order of 100 fs.
This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p229-235.